| Product |
Character |
Application |
| Al-Etchant |
Mixture of acetic, nitric, and phosphric acid |
Al interconnection etching |
| Au-Etchant |
Mixed soln. of KI/I2 |
Au electrode etcing
Au bump etching |
| 50% ACN |
50% Ammonium cerium
nitrate soln. |
CrOx black matrix etching |
| ITO-Etchant |
Oxalic acid soln. with surfactant |
ITO transparent electrode |
| HHED |
Mixture of hydrazine and ethylenediamine |
Polyimide film etching |
| TWL-I & II |
Selective etchant for Ti and Ti/W alloy film
I:H2O2 with additive
II:NH4OH soln.
Mix before use. |
Pb solder bump process
Etching for UBM-Ti or TiW |
| TCL-I & II |
Pb-free bump process
Etching for UBM-Ti or TiW |
| TIW-I & II |
Au-bump process
Au-bump Etching for UBM-TiW |
| SWAT -200S |
NaOH soln. with additive to prevent metal adsorption |
Si etching after lapping process in wafer fabrication |
| SWAT-300P |
KOH soln. with different types of additive to prevent metal adsorption |
| KOH-40S |
As additive in slurry |
| SUN-X200 |
KOH soln. with additive as texture production |
Mono and polycrystalline Si etching to produce solar cell |